RP1A090ZPTR
MOSFET P-CH 12V 9A MPT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor P-Channel MOSFET, RP1A090ZPTR, offers a 12V drain-source voltage and a continuous drain current of 9A at 25°C (Ta). This surface mount device, packaged in an MPT6 (6-SMD, Flat Leads), features a low Rds(on) of 12mOhm at 9A and 4.5V. Key parameters include a gate charge of 59 nC at 4.5V and input capacitance of 7400 pF at 6V. The device supports drive voltages from 1.5V to 4.5V, with a maximum gate-source voltage of ±10V and a threshold voltage of 1V at 1mA. Rated for 2W power dissipation (Ta) and an operating temperature of 150°C (TJ), this MOSFET is suitable for applications in automotive and industrial electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 9A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | MPT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7400 pF @ 6 V |
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