RMW280N03TB
MOSFET N-CH 30V 28A 8PSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RMW280N03TB is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 28 A at 25°C (Ta), with a maximum power dissipation of 3 W (Ta). The Rds On is rated at a low 2.8 mOhm at 28 A and 10 V gate drive voltage. Optimized for surface mounting, it is housed in an 8-PSOP package and supplied on tape and reel. Key parameters include a gate charge (Qg) of 53 nC at 10 V and input capacitance (Ciss) of 3130 pF at 15 V. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3130 pF @ 15 V |
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