RMW200N03TB
MOSFET N-CH 30V 20A 8PSOPManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RMW200N03TB is an N-Channel power MOSFET featuring a 30V drain-source voltage and continuous drain current capability of 20A at 25°C. This device offers a low on-resistance of 4.2mOhm maximum at 20A and 10V gate-source voltage. The RMW200N03TB is housed in an 8-PSOP surface mount package, designed for efficient thermal management with a maximum power dissipation of 3W. Key parameters include a gate charge of 29nC maximum at 10V and input capacitance of 1780pF maximum at 15V. This MOSFET is suitable for applications in power management, industrial automation, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3W (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-PSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1780 pF @ 15 V |
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