RK3055ETL
MOSFET N-CH 60V 8A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RK3055ETL is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-to-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 8 A at 25°C. The RK3055ETL boasts a maximum on-resistance (Rds On) of 150 mOhm at 4 A and 10 V gate-source voltage, with a drive voltage requirement of 10V. Its maximum power dissipation is 20 W (Tc), and it operates at junction temperatures up to 150°C. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, commonly known as CPT3, and is supplied on tape and reel. Key electrical characteristics include an input capacitance (Ciss) of 520 pF at 10 V and a gate-source threshold voltage (Vgs(th)) of 2.5 V at 1 mA. This MOSFET is utilized in industries such as automotive and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 520 pF @ 10 V |
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