RJU002N06T106
MOSFET N-CH 60V 200MA UMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RJU002N06T106 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 200mA at 25°C with a maximum power dissipation of 200mW (Ta). The Rds On is specified at 2.3 Ohms maximum at 200mA and 4.5V Vgs. Input capacitance (Ciss) is 18 pF maximum at 10V. It operates with a gate-source voltage range of ±12V and features a threshold voltage (Vgs(th)) of 1.5V maximum at 1mA. The UMT3 package is a SC-70, SOT-323 type, supplied on tape and reel. This device is suitable for use in general purpose switching and amplification applications, often found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| Rds On (Max) @ Id, Vgs | 2.3Ohm @ 200mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 1.5V @ 1mA |
| Supplier Device Package | UMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18 pF @ 10 V |