Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

RJK005N03FRAT146

Banner
productimage

RJK005N03FRAT146

MOSFET N-CH 30V 500MA SMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RJK005N03FRAT146 is an N-Channel MOSFET designed for high-efficiency switching applications. This AEC-Q101 qualified device features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) of 500mA at 25°C. With a maximum On-Resistance (Rds On) of 580mOhm at 500mA and 4.5V Vgs, it offers low conduction losses. The device operates with gate drive voltages from 2.5V to 4.5V and has a maximum gate charge of 4nC at 4V. The SMT3 package (TO-236-3, SC-59, SOT-23-3) is suitable for surface mounting and supports an operating temperature up to 150°C. Power dissipation is rated at 200mW. This component is utilized in automotive and general electronics applications where robust power management is critical.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C500mA (Ta)
Rds On (Max) @ Id, Vgs580mOhm @ 500mA, 4.5V
FET Feature-
Power Dissipation (Max)200mW (Ta)
Vgs(th) (Max) @ Id1.5V @ 1mA
Supplier Device PackageSMT3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4 nC @ 4 V
Input Capacitance (Ciss) (Max) @ Vds60 pF @ 10 V
QualificationAEC-Q101

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy