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RJ1L12BGNTLL

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RJ1L12BGNTLL

NCH 60V 120A POWER MOSFET : RJ1L

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor's RJ1L12BGNTLL is an N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc). This device offers a low on-resistance of 2.9mOhm maximum at 40A and 10V Vgs. The MOSFET is housed in a TO-263AB (TO-263-3, D2PAK) surface mount package, designed for efficient thermal management with a maximum power dissipation of 192W (Tc). Key electrical parameters include a gate charge of 175 nC maximum at 10V and input capacitance of 9000 pF maximum at 30V. The operating junction temperature range is -55°C to 150°C. This component is suitable for applications in automotive, industrial power supplies, and power conversion systems. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.9mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)192W (Tc)
Vgs(th) (Max) @ Id2.5V @ 500µA
Supplier Device PackageTO-263AB
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9000 pF @ 30 V

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