RJ1L08CGNTLL
MOSFET N-CH 60V 80A LPTLManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RJ1L08CGNTLL is an N-channel MOSFET designed for demanding applications. This surface mount device features a 60V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C. The low on-resistance of 7.7mOhm at 80A and 10V Vgs makes it highly efficient for power switching. With a maximum power dissipation of 96W at 25°C (Tc), this MOSFET is suitable for applications where thermal management is critical. Key parameters include a gate charge of 55 nC (max) at 10V and an input capacitance of 2600 pF (max) at 30V. The RJ1L08CGNTLL is housed in a TO-263-3, D2PAK package, facilitating robust thermal performance and ease of assembly in high-power systems. Its advanced MOSFET technology ensures reliable operation across a wide temperature range up to 150°C (TJ). This component is widely utilized in power supply units, automotive electronics, and industrial motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 96W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 50µA |
| Supplier Device Package | LPTL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2600 pF @ 30 V |
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