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RJ1G12BGNTLL

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RJ1G12BGNTLL

MOSFET N-CH 40V 120A LPTL

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Rohm Semiconductor RJ1G12BGNTLL is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 120A at 25°C, with a maximum power dissipation of 178W under continuous operation. The RJ1G12BGNTLL offers a low on-resistance (Rds On) of 1.86mOhm at 50A and 10V Vgs, contributing to efficient power handling. Key parameters include a gate charge (Qg) of 165 nC at 10V and input capacitance (Ciss) of 12500 pF at 20V. This surface mount component utilizes the LPTL package, suitable for automated assembly. The operating junction temperature range extends to 150°C. Applications for this MOSFET include power management, automotive systems, and industrial motor control.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs1.86mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)178W (Tc)
Vgs(th) (Max) @ Id2.5V @ 2mA
Supplier Device PackageLPTL
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12500 pF @ 20 V

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