RJ1G08CGNTLL
MOSFET N-CH 40V 80A LPTLManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RJ1G08CGNTLL is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 80A at 25°C (Tc). With a low on-resistance of 5.6mOhm at 80A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in a TO-263-3, D2PAK package, suitable for surface mounting and offering efficient thermal management with a power dissipation of 78W (Tc) and an operating junction temperature of 150°C. Key parameters include a gate charge of 31.1 nC (max) at 10V and input capacitance of 2410 pF (max) at 20V. This component is utilized in power management, automotive, and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 78W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 500µA |
| Supplier Device Package | LPTL |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 31.1 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 20 V |
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