RHU003N03T106
MOSFET N-CH 30V 300MA UMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor MOSFET N-Channel, part number RHU003N03T106. This MOSFET features a 30V drain-source voltage and a continuous drain current of 300mA at 25°C (Ta). The ON-resistance (Rds On) is a maximum of 1.2 Ohms at 300mA and 10V gate-source voltage. The device is packaged in a UMT3 (SC-70, SOT-323) surface mount configuration, supplied on tape and reel. Maximum power dissipation is 200mW (Ta). Gate-source voltage tolerance is ±20V. This component is utilized in various applications including consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | UMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 20 pF @ 10 V |
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