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RHU003N03FRAT106

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RHU003N03FRAT106

MOSFET N-CH 30V 300MA UMT3

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RHU003N03FRAT106 is an N-Channel power MOSFET designed for surface mount applications within an AEC-Q101 qualified UMT3 package (SC-70, SOT-323). This device features a Drain-Source Voltage (Vdss) of 30 V and can handle a continuous Drain Current (Id) of 300mA at 25°C, with a maximum power dissipation of 200mW. The Rds On (Max) is specified at 1.2 Ohms at 300mA and 10V Vgs. Gate drive voltages range from 4V to 10V, with a maximum Gate-Source Voltage (Vgs) tolerance of ±20V. Input capacitance (Ciss) is 20pF at 10V. This automotive-grade component is suitable for applications requiring efficient switching and power management in automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs1.2Ohm @ 300mA, 10V
FET Feature-
Power Dissipation (Max)200mW
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device PackageUMT3
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds20 pF @ 10 V
QualificationAEC-Q101

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