RHK003N06T146
MOSFET N-CH 60V 300MA SMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RHK003N06T146 is an N-Channel MOSFET with a Drain-Source voltage (Vdss) of 60V. This device offers a continuous drain current (Id) of 300mA at 25°C and a maximum power dissipation of 200mW (Ta). Key electrical characteristics include a maximum on-resistance (Rds On) of 1 Ohm at 300mA and 10V, and a gate charge (Qg) of 6 nC at 10V. Input capacitance (Ciss) is 33pF maximum at 10V. The threshold voltage (Vgs(th)) is 2.5V maximum at 1mA, with a maximum gate-source voltage (Vgs(max)) of ±20V. Operating temperature range is up to 150°C (TJ). The component is supplied in a Surface Mount SMT3 package (TO-236-3, SC-59, SOT-23-3) on tape and reel. This MOSFET is suitable for applications in consumer electronics and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 300mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 200mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 33 pF @ 10 V |
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