RDX120N50FU6
MOSFET N-CH 500V 12A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RDX120N50FU6 is a high-performance N-Channel MOSFET designed for demanding power applications. Featuring a Drain-to-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 12A at 25°C, this device offers robust performance in a TO-220FM package. Its low on-resistance (Rds On) of 500mOhm at 6A and 10V gate drive voltage ensures efficient power delivery with minimal losses. The RDX120N50FU6 boasts a maximum power dissipation of 45W (Tc) and an operating junction temperature of 150°C, making it suitable for use in industrial power supplies, motor control, and lighting applications. Key electrical characteristics include a gate charge (Qg) of 45 nC at 10V and an input capacitance (Ciss) of 1600 pF at 25V. This component is supplied in bulk packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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