RDX100N60FU6
MOSFET N-CH 600V 10A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RDX100N60FU6 is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 600V and a continuous drain current (Id) of 10A at 25°C (Ta). With a maximum power dissipation of 45W (Tc), it is suitable for high-power switching in industrial, automotive, and power supply applications. The RDX100N60FU6 offers a low on-resistance of 650mOhm at 5A and 10V, facilitated by its advanced MOSFET technology. Key parameters include a gate charge (Qg) of 45 nC at 10V and input capacitance (Ciss) of 1600 pF at 25V. Packaged in a TO-220FM through-hole configuration, this device ensures robust thermal performance and ease of mounting. The operating junction temperature extends up to 150°C, with a maximum gate-source voltage of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 45W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
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