RDX080N50FU6
MOSFET N-CH 500V 8A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RDX080N50FU6 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-source voltage (Vdss) of 500 V and a continuous drain current (Id) of 8A at 25°C (Ta). With a maximum power dissipation of 40W (Tc), it is suitable for demanding power management tasks. The RDX080N50FU6 offers a typical on-resistance (Rds On) of 850mOhm at 4A and 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 28 nC (max) at 10V and an input capacitance (Ciss) of 920 pF (max) at 25V. The MOSFET is housed in a TO-220FM package, facilitating through-hole mounting. This device is commonly utilized in power supply units, motor control, and lighting solutions. The operating temperature range extends to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 920 pF @ 25 V |
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