RDX060N60FU6
MOSFET N-CH 600V 6A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RDX060N60FU6 is a 600V N-Channel MOSFET designed for high-voltage switching applications. This device features a continuous drain current of 6A at 25°C (Ta) and a maximum power dissipation of 40W (Tc). The Rds On is specified at 1.2 Ohm maximum at 3A and 10V Vgs. Key parameters include a gate charge of 25 nC at 10V and an input capacitance of 950 pF at 25V. The TO-220FM package facilitates through-hole mounting. This component is suitable for use in power supply units and industrial automation systems. The maximum operating junction temperature is 150°C, with a gate-source voltage tolerance of ±30V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 25 V |
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