RDX050N50FU6
MOSFET N-CH 500V 5A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor presents the RDX050N50FU6, an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 5 A at 25°C. The RDX050N50FU6 offers a maximum On-Resistance (Rds On) of 1.5 Ohm at 2.5 A and 10 V gate drive. With a maximum power dissipation of 35 W at the case temperature, this MOSFET is suitable for power conversion and control circuits in industrial, automotive, and consumer electronics sectors. The device is housed in a TO-220FM package with a through-hole mounting type and operates reliably up to a junction temperature of 150°C. Key parameters include a gate charge of 16 nC and input capacitance of 500 pF.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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