RDX045N60FU6
MOSFET N-CH 600V 4.5A TO220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RDX045N60FU6, is a 600V device designed for power switching applications. It features a continuous drain current (Id) of 4.5A at 25°C (Ta) and a maximum power dissipation of 35W (Tc). The Rds On (Max) is 2.1 Ohm at 2.25A and 10V, with a gate charge (Qg) of 16 nC at 10V. Input capacitance (Ciss) is a maximum of 500 pF at 25V. This component operates at a junction temperature of up to 150°C and is housed in a TO-220FM package for through-hole mounting. The RDX045N60FU6 is suitable for various industrial applications including power supplies and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 2.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
RTQ045N03TR
MOSFET N-CH 30V 4.5A TSMT6
R6025JNZC17
MOSFET N-CH 600V 25A TO3PF
