RDR005N25TL
MOSFET N-CH 250V 500MA TSMT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RDR005N25TL is a N-Channel MOSFET designed for power management applications. This component features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 500mA at 25°C. The Rds On is specified at a maximum of 8.8 Ohms when Id is 250mA and Vgs is 10V. With a gate charge (Qg) of 3.5 nC (max) at 10V and input capacitance (Ciss) of 70 pF (max) at 25V, it offers efficient switching characteristics. The device operates at temperatures up to 150°C (TJ) and has a maximum power dissipation of 540mW (Ta). It is supplied in a TSMT3 surface mount package, specifically the SC-96, on tape and reel. This MOSFET is suitable for use in industrial automation, consumer electronics, and lighting control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 8.8Ohm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TSMT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 70 pF @ 25 V |
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