RDN150N20FU6
MOSFET N-CH 200V 15A TO220FNManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RDN150N20FU6 is a 200V N-Channel Power MOSFET designed for demanding applications. This through-hole component, housed in a TO-220FN package, offers a continuous drain current of 15A at 25°C with a 160mOhm maximum Rds(on) at 7.5A and 10V Vgs. Key parameters include a 1224pF maximum input capacitance and 64nC gate charge at 10V. The device supports a maximum operating junction temperature of 150°C and a power dissipation of 40W (Tc). It is suitable for use in industrial automation, power supplies, and electric vehicle charging systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224 pF @ 10 V |
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