RDN120N25
MOSFET N-CH 250V 12A TO220FNManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RDN120N25 is an N-Channel power MOSFET designed for applications requiring high voltage and current handling. This device features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 12 A at 25°C (Ta). The RDN120N25 offers a low On-Resistance (Rds On) of 210 mOhm maximum at 6 A and 10 V gate drive. With a maximum power dissipation of 40 W (Tc), it is suitable for demanding power conversion and control systems. Key electrical parameters include a gate charge (Qg) of 62 nC maximum at 10 V and an input capacitance (Ciss) of 1224 pF maximum at 10 V. The MOSFET operates at junction temperatures up to 150°C and is housed in a TO-220FN package for through-hole mounting. This component is utilized across various industrial sectors, including power supplies, motor control, and lighting.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224 pF @ 10 V |
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