RDN100N20FU6
MOSFET N-CH 200V 10A TO220FNManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RDN100N20FU6. This TO-220FN packaged device features a 200V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C ambient. The Rds On is specified at a maximum of 360mOhm at 5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 30 nC and input capacitance (Ciss) of 543 pF, both measured at 10V. This MOSFET is designed for through-hole mounting and offers a maximum power dissipation of 35W at the case temperature. Operating temperature range extends to 150°C. This component is suitable for applications in power supply, motor control, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220FN |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 543 pF @ 10 V |
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