RDD050N20TL
MOSFET N-CH 200V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RDD050N20TL is an N-Channel Power MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous drain current (Id) of 5A at 25°C. The Rds On is specified at a maximum of 720mOhm at 2.5A and 10V gate drive. Key parameters include a gate charge (Qg) of 9.3 nC at 10V and an input capacitance (Ciss) of 292 pF at 10V. The MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, suitable for surface mounting. With a maximum power dissipation of 20W (Tc), this component finds application in power supply units, motor control, and general-purpose switching circuits across various industrial sectors. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 720mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 292 pF @ 10 V |
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