RD3P08BBDTL
MOSFET N-CH 100V 80A TO252Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number RD3P08BBDTL. This TO-252 package device offers a 100V drain-source breakdown voltage and 80A continuous drain current at 25°C, with a maximum power dissipation of 119W. Featuring a low on-resistance of 11.6mOhm at 80A and 10V, this MOSFET utilizes Metal Oxide technology. Key parameters include a gate charge of 37nC and input capacitance of 1940pF at 10V and 50V respectively. The device supports gate-source voltages up to ±20V and has a threshold voltage of 4V at 1mA. Mounting is surface mount within a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied on tape and reel. This component is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1940 pF @ 50 V |
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