RD3L08BGNTL
MOSFET N-CH 60V 80A TO252Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor's RD3L08BGNTL is an N-Channel MOSFET designed for high-current switching applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 80A at 25°C (Tc). The low on-resistance (Rds On) of 5.5mOhm is achieved at 80A and 10V Vgs, enabling efficient power transfer. With a maximum power dissipation of 119W (Tc) and an operating junction temperature of 150°C, this MOSFET is suitable for demanding thermal environments. The surface mount TO-252-3, DPAK package facilitates integration into compact PCB designs. Key electrical parameters include a gate charge (Qg) of 71 nC and input capacitance (Ciss) of 3620 pF, both specified at relevant Vgs and Vds conditions. This component finds application in power supply units, automotive electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 119W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3620 pF @ 30 V |
Request a Quote
Clients Also Buy
R5009ANX
MOSFET N-CH 500V 9A TO220
RS1E240BNTB
MOSFET N-CH 30V 24A 8HSOP
SCT4045DRC15
750V, 45M, 4-PIN THD, TRENCH-STR
