RD3G600GNTL
MOSFET N-CH 40V 60A TO252Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RD3G600GNTL is an N-Channel MOSFET designed for high-current switching applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 60A at 25°C. Its low on-resistance (Rds On) of 3.6mOhm at 60A and 10V gate-source voltage (Vgs) minimizes conduction losses, enabling efficient power management.
With a maximum power dissipation of 40W (Tc), this MOSFET is suitable for demanding power conversion and management tasks. The device offers a high junction temperature capability of 150°C and a gate charge (Qg) of 46.5 nC at 10V Vgs. Packaged in a TO-252-3, DPAK surface-mount configuration, it is supplied on tape and reel. Applications include automotive power systems and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 46.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3400 pF @ 20 V |
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