RD3G500GNTL
MOSFET N-CH 40V 50A TO252Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number RD3G500GNTL, offers 40V drain-source voltage and 50A continuous drain current at 25°C. This device features a low ON-resistance of 4.9mOhm at 50A and 10V Vgs, with a 25800pF input capacitance (Ciss) at 20V Vds. The gate charge (Qg) is specified at 31nC maximum at 10V Vgs. Designed for efficient power management, it operates with a gate drive range of 4.5V to 10V and a maximum gate-source voltage of ±20V. The threshold voltage (Vgs(th)) is 2.5V at 1mA. This RoHS-compliant component is packaged in a surface-mount TO-252-3 (DPAK) package, rated for 35W power dissipation at 150°C junction temperature. It is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 22800 pF @ 20 V |
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