RD3G400GNTL
MOSFET N-CH 40V 40A TO252Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
This Rohm Semiconductor N-Channel MOSFET, part number RD3G400GNTL, offers robust performance in a TO-252 package. It features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 40A at 25°C, with a maximum power dissipation of 26W (Tc). The low on-resistance is specified at 7.5mOhm at 40A and 10V gate drive. Key characteristics include an input capacitance (Ciss) of 1410pF at 20V and a gate charge (Qg) of 19nC at 10V. Operating temperature range extends to 150°C (TJ). This component is suitable for applications in automotive, industrial power, and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1410 pF @ 20 V |
Request a Quote
Clients Also Buy
RQ7G080BGTCR
NCH 40V 8A, TSMT8, POWER MOSFET
QS6U22TR
MOSFET P-CH 20V 1.5A TSMT6
R6020YNXC7G
600V 12A TO-220FM, FAST SWITCHIN
