RCX510N25
MOSFET N-CH 250V 51A TO-220FMManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RCX510N25 is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) capability of 51 A at 25°C (Ta). With a maximum power dissipation (Pd) of 40 W at 25°C (Tc), it is suitable for demanding power management tasks. The device utilizes a TO-220FM package for through-hole mounting. Key electrical characteristics include a gate-source voltage (Vgs) range of ±30V. This MOSFET is commonly employed in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 51A (Ta) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
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