RCJ450N20TL
MOSFET N-CH 200V 45A LPTSManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RCJ450N20TL is an N-Channel Power MOSFET designed for demanding applications. This device features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 45A at 25°C (Tc). The low on-resistance (Rds On) of 55mOhm at 22.5A and 10V drive voltage, coupled with a gate charge (Qg) of 80 nC at 10V, facilitates efficient switching. It offers significant power dissipation capabilities, rated at 40W (Tc) and 1.56W (Ta). The input capacitance (Ciss) is 4200 pF at 25V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB package for surface mounting, supplied on tape and reel. It is suitable for use in power supply, industrial automation, and automotive systems. The operating junction temperature is rated up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 22.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.56W (Ta), 40W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | LPTS |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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