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RCJ330N25TL

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RCJ330N25TL

MOSFET N-CH 250V 33A LPTS

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor RCJ330N25TL is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 33A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 105mOhm at 16.5A and 10V, it offers efficient power switching. The MOSFET has a Gate Charge (Qg) of 80 nC at 10V and an input capacitance (Ciss) of 4500 pF at 25V. It is housed in a TO-263-3, D2PAK (2 Leads + Tab), TO-263AB surface mount package, identified as LPTS by the supplier. The maximum power dissipation is rated at 1.56W (Ta) and 40W (Tc), with an operating junction temperature of 150°C. This component is suitable for use in power supply, motor control, and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C33A (Tc)
Rds On (Max) @ Id, Vgs105mOhm @ 16.5A, 10V
FET Feature-
Power Dissipation (Max)1.56W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageLPTS
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)250 V
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4500 pF @ 25 V

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