RCD100N20TL
MOSFET N-CH 200V 10A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RCD100N20TL is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 10A at 25°C (Tc). With a maximum on-resistance (Rds On) of 182mOhm at 5A and 10V, it offers efficient power handling. The device is specified with a gate charge (Qg) of 25 nC maximum at 10V and an input capacitance (Ciss) of 1400 pF maximum at 25V. Power dissipation is rated at 850mW (Ta) and 20W (Tc). The RCD100N20TL utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, supplied in Tape & Reel (TR). Its operating temperature range extends to 150°C (TJ). This MOSFET is suitable for use in power supply, motor control, and lighting applications within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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