RCD100N19TL
MOSFET N-CH 190V 10A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RCD100N19TL is an N-Channel MOSFET designed for power management applications. This device features a drain-to-source voltage (Vdss) of 190V and a continuous drain current (Id) of 10A at 25°C (Tc). The RCD100N19TL offers a maximum on-resistance (Rds On) of 182mOhm at 5A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 52 nC maximum at 10V Vgs and an input capacitance (Ciss) of 2000 pF maximum at 25V Vds. Power dissipation is rated at 850mW (Ta) and 20W (Tc). This MOSFET is available in a TO-252-3, DPAK (2 leads + tab), SC-63 package, suitable for surface mounting. It is typically utilized in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 182mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 190 V |
| Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF @ 25 V |
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