RCD075N19TL
MOSFET N-CH 190V 7.5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's RCD075N19TL is a high-performance N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 190 V and a continuous drain current (Id) of 7.5 A at 25°C (Tc). The RCD075N19TL offers a maximum on-resistance (Rds On) of 336 mOhm at 3.8 A and 10 V (Vgs). Its robust construction allows for significant power dissipation, with ratings of 850 mW (Ta) and 20 W (Tc). The device operates at junction temperatures up to 150°C and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (CPT3) format, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 30 nC at 10 V and input capacitance (Ciss) of 1100 pF at 25 V. This MOSFET is suitable for use in power switching and control circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 336mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 190 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 25 V |
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