RCD051N20TL
MOSFET N-CH 200V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RCD051N20TL is a 200V N-Channel MOSFET designed for surface mount applications. This device features a continuous drain current capability of 5A at 25°C (Tc) and a low on-resistance of 760mOhm maximum at 2.5A and 10V gate drive. With a maximum junction temperature of 150°C, it offers a power dissipation of 850mW (Ta) and 20W (Tc). The CPT3 package, also known as TO-252-3, DPAK, houses this MOSFET, providing a compact footprint for integration into power management circuits. Key parameters include a gate charge of 8.3 nC (Max) at 10V and input capacitance of 330 pF (Max) at 25V. This component is commonly utilized in power supplies, industrial automation, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 760mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 25 V |
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