RCD050N20TL
MOSFET N-CH 200V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RCD050N20TL is an N-Channel Power MOSFET with a Drain-Source Voltage of 200V. This component offers a continuous drain current of 5A at 25°C and a maximum power dissipation of 20W (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 618mOhm at 2.5A, 10V, and a gate charge (Qg) of 9 nC at 10V. The input capacitance (Ciss) is rated at a maximum of 380 pF at 25V. Designed for surface mount applications, it is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, also known as CPT3. The operating temperature range extends to 150°C (TJ). This device is suitable for various power management applications across automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 618mOhm @ 2.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Vgs(th) (Max) @ Id | 5.25V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 25 V |
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