RCD041N25TL
MOSFET N-CH 250V 4A CPT3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor RCD041N25TL is an N-Channel MOSFET designed for surface mounting in a TO-252-3 (DPAK) package. This component features a drain-to-source voltage of 250V and a continuous drain current rating of 4A at 25°C. It offers a maximum on-resistance of 1.3 Ohms at 2A and 10V drive voltage. With a gate charge of 8.5 nC and input capacitance of 350 pF, it is suitable for power switching applications. The device has a maximum junction temperature of 150°C and dissipates up to 29W at 25°C case temperature. Industries such as industrial automation, consumer electronics, and power supply design commonly utilize this type of device. The RCD041N25TL is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.3Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 850mW (Ta), 29W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 1mA |
| Supplier Device Package | CPT3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
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