RAL045P01TCR
MOSFET P-CH 12V 4.5A TUMT6Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor RAL045P01TCR is a P-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 4.5A at 25°C. The Rds On is specified at a maximum of 30mOhm at 4.5A and 4.5V. The TUMT6 package offers a 1W power dissipation rating at 25°C and operates within a temperature range of 150°C (TJ). Key specifications include a Gate Charge (Qg) of 40 nC at 4.5V and an Input Capacitance (Ciss) of 4200 pF at 6V. This MOSFET is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TUMT6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | -8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 6 V |
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