R8019KNXC7G
800V 19A, TO-220FM, HIGH-SPEED SManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number R8019KNXC7G, offers an 800V drain-to-source voltage (Vdss) and a continuous drain current of 19A at 25°C (Tc). This high-speed MOSFET features a maximum on-resistance (Rds On) of 265mOhm at 9.5A and 10V. The device has a maximum power dissipation of 83W (Tc) and operates at junction temperatures up to 150°C. Key parameters include a gate charge (Qg) of 65 nC at 10V and input capacitance (Ciss) of 2100 pF at 100V. Packaged in a TO-220FM (TO-220-3 Full Pack) for through-hole mounting, this MOSFET is suitable for applications in power supply, motor control, and lighting industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 265mOhm @ 9.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 7mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 100 V |
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