R8011KNXC7G
HIGH-SPEED SWITCHING NCH 800V 11Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor R8011KNXC7G is an N-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 800 V. This device offers a continuous drain current of 11A (Ta) and a maximum power dissipation of 65W (Tc) in a TO-220FM package. Key electrical characteristics include a maximum Rds On of 450mOhm at 5.5A, 10V, and a gate charge (Qg) of 37 nC at 10V. Input capacitance (Ciss) is rated at 1200 pF at 100V. The operating junction temperature reaches 150°C. This component is suitable for high-speed switching applications across various industries including power supplies and industrial automation, utilizing Metal Oxide technology. It is supplied in a Tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 5.5mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 100 V |
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