R8009KNXC7G
HIGH-SPEED SWITCHING NCH 800V 9AManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel Power MOSFET, R8009KNXC7G, offers 800 V drain-to-source voltage and 9 A continuous drain current at 25°C. This through-hole component features a maximum on-resistance of 600 mOhm at 4.5 A and 10 V Vgs. With a gate charge of 27 nC and input capacitance of 900 pF, it is designed for high-speed switching applications. The device is housed in a TO-220FM package and supports a maximum gate-source voltage of ±20V. Power dissipation is rated at 59W (Tc). This MOSFET is suitable for use in power supply, industrial automation, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 5mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 900 pF @ 100 V |
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