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R8008ANJGTL

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R8008ANJGTL

NCH 800V 8A POWER MOSFET : R8008

Manufacturer: Rohm Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Rohm Semiconductor N-Channel Power MOSFET, part number R8008ANJGTL, offers 800V drain-source breakdown voltage and 8A continuous drain current at 25°C. This TO-263S packaged device features low on-resistance of 1.03 Ohms maximum at 4A and 10V Vgs, with a maximum power dissipation of 195W. Key parameters include 38 nC maximum gate charge and 1100 pF maximum input capacitance. Designed for surface mounting, it operates up to 150°C junction temperature. This component is suitable for applications in power supply, industrial motor control, and lighting.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8A (Tc)
Rds On (Max) @ Id, Vgs1.03Ohm @ 4A, 10V
FET Feature-
Power Dissipation (Max)195W (Tc)
Vgs(th) (Max) @ Id5V @ 1mA
Supplier Device PackageTO-263S
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)800 V
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V

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