R8006KNXC7G
HIGH-SPEED SWITCHING NCH 800V 6AManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number R8006KNXC7G, is a high-speed switching device in a TO-220FM package. This through-hole component features a drain-source voltage (Vdss) of 800 V and a continuous drain current (Id) of 6 A at 25°C. The Rds(on) is specified at a maximum of 900 mOhm at 3 A and 10 V gate drive. With a maximum power dissipation of 52W (Tc), it is suitable for applications requiring robust power handling. Key parameters include a gate charge of 22 nC (max) at 10 V and input capacitance (Ciss) of 650 pF (max) at 100 V. The maximum gate-source voltage is ±20V, and the threshold voltage (Vgs(th)) is 4.5V (max) at 4 mA. This MOSFET is utilized in industrial and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 100 V |
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