R8006KND3TL1
HIGH-SPEED SWITCHING NCH 800V 6AManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor N-Channel MOSFET, part number R8006KND3TL1. This device offers an 800 V drain-source voltage and a continuous drain current of 6A at 25°C ambient. With a maximum on-resistance of 900mOhm at 3A and 10V gate-source voltage, it features a gate charge of 22 nC at 10 V and input capacitance of 650 pF at 100 V. The power dissipation is rated at 83W (Tc), with a junction temperature limit of 150°C. Mounting is via surface mount in a TO-252-3, DPAK package. This component is suitable for high-speed switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 30 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 100 V |
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