R8003KNXC7G
800V 3A, TO-220FM, HIGH-SPEED SWManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Rohm Semiconductor N-Channel MOSFET, part number R8003KNXC7G, is designed for high-speed switching applications with a Drain-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 3A at 25°C. This device features a low on-resistance of 1.8 Ohm maximum at 1.5A and 10V. The gate charge (Qg) is a maximum of 11.5 nC at 10V, and input capacitance (Ciss) is 300 pF maximum at 100V. The MOSFET is housed in a TO-220FM package with a through-hole mounting type, offering a maximum power dissipation of 36W at 150°C (TJ). This component is suitable for use in power supply units, lighting systems, and industrial motor control applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 2mA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 100 V |
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