R8002KNXC7G
800V 1.6A, TO-220FM, HIGH-SPEEDManufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R8002KNXC7G is an N-Channel MOSFET designed for high-speed switching applications. This component features a Drain-to-Source Voltage (Vdss) of 800 V and a continuous drain current (Id) of 1.6 A at 25°C. The Rds On is specified at a maximum of 4.2 Ohms under conditions of 800 mA and 10 V gate-source voltage. Key parameters include a maximum gate charge (Qg) of 7.5 nC at 10 V and an input capacitance (Ciss) of 140 pF at 100 V. With a maximum power dissipation of 28 W (Tc) and an operating junction temperature of 150°C, this MOSFET is housed in a TO-220FM package, suitable for through-hole mounting. The R8002KNXC7G finds application in power supply units and general-purpose switching circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 25 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 4.2Ohm @ 800mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 150µA |
| Supplier Device Package | TO-220FM |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 100 V |
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