R8002ANJGTL
NCH 800V 2A POWER MOSFET : R8002Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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The Rohm Semiconductor R8002ANJGTL is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-to-Source voltage of 800V and a continuous drain current rating of 2A at 25°C. The device offers a maximum on-resistance of 4.3 Ohms at 1A and 10V gate drive. With a maximum power dissipation of 62W (Tc) and an operating junction temperature of 150°C, it is suitable for demanding environments. The R8002ANJGTL is packaged in a TO-263S (TO-263-3, D2PAK) surface-mount configuration, supplied on tape and reel. Its characteristics make it applicable in power supply units, lighting control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Supplier Device Package | TO-263S |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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