R6535KNZC8
MOSFET N-CH 650V 35A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6535KNZC8 is an N-Channel Power MOSFET designed for demanding applications. This device features a 650V drain-source breakdown voltage and supports a continuous drain current of 35A at 25°C (Tc), with a maximum power dissipation of 102W (Tc). The Rds (On) is rated at 115mOhm maximum at 18.1A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 72 nC (max) at 10V and input capacitance (Ciss) of 3000 pF (max) at 25V. The R6535KNZC8 is packaged in a TO-3PF through-hole case, facilitating robust mounting. This component is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 18.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 102W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 1.21mA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 25 V |
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