R6530KNZC8
MOSFET N-CH 650V 30A TO3Manufacturer: Rohm Semiconductor
Categories: Single FETs, MOSFETs
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Rohm Semiconductor's R6530KNZC8 is a 650V N-Channel power MOSFET designed for demanding applications. This through-hole component, housed in a TO-3PF package, offers a continuous drain current capability of 30A at 25°C (Tc) and a maximum power dissipation of 86W (Tc). Key electrical characteristics include a low Rds On of 140mOhm maximum at 14.5A and 10V, and a gate charge of 56 nC maximum at 10V. The device features a drain-source voltage of 650V and a gate-source voltage range of ±20V, with a threshold voltage of 5V maximum at 960µA. The input capacitance (Ciss) is rated at 2350 pF maximum at 25V. This MOSFET is suitable for use in power supply units, industrial motor control, and high-voltage switching applications. It operates at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 14.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 960µA |
| Supplier Device Package | TO-3PF |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2350 pF @ 25 V |
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